NTE256 查看數據表（PDF） - NTE Electronics

零件编号

产品描述 (功能)

比赛名单

NTE256

Silicon NPN Transistor Darlington w/Damper Diode

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Base–Emitter Saturation Voltage

DC Current Gain

Diode Forward Voltage

Resistive Switching Times

VBE(sat)

hFE

VF

IC = 10A, IB = 0.5A, Note 1

IC = 18A, IB = 1.8A, Note 1

IC = 22A, IB = 2.2A, Note 1

VCE = 5V, IC = 10A

VCE = 5V, IC = 18A

IF = 22A

–

– 2.5 V

–

– 3.0 V

–

– 3.3 V

30 –

–

20 –

–

–

–

4

V

Turn–On Time

Storage Time

Fall Time

Inductive Switching Times

ton

VCC = 250V, IC = 10A, IB1 = 0.5A,

ts

VBE(off) = –5V

tf

– 0.35 0.6 µs

– 0.8 1.5 µs

– 0.25 0.6 µs

Storage Time

Fall Time

Storage Time

Fall Time

ts

VClamp = 250V, IC = 10A, IB1 = 0.5A,

– 0.8 1.5 µs

tf

VBE(off) = –5V

– 0.08 0.5 µs

ts

VClamp = 250V, IC = 20A, IB1 = 2A,

tf

VBE(off) = –5V

– 0.8 1.5 µs

– 0.35 0.7 µs

Note 1. Pulsed: Pulse Width = 300µs, Duty Cycle = 1.5%.

.600

(15.24)

C

.060 (1.52)

.173 (4.4)

.156

(3.96)

Dia.

BCE

.550

(13.97) .430

(10.92)

.500

(12.7)

Min

.055 (1.4)

.216 (5.45)

C

B

E

.015 (0.39)

NOTE: Dotted line indicates that

case may have square corners

Share Link: