2N7000_D74Z 查看數據表（PDF） - Fairchild Semiconductor
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2N7000_D74Z Datasheet PDF : 12 Pages
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August 2016
2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
Features
• High Density Cell Design for Low RDS(ON)
• Voltage Controlled Small Signal Switch
• Rugged and Reliable
• High Saturation Current Capability
Description
These N-channel enhancement mode field effect transis-
tors are produced using Fairchild's proprietary, high cell
density, DMOS technology. These products have been
designed to minimize on-state resistance while providing
rugged, reliable, and fast switching performance. They
can be used in most applications requiring up to 400 mA
DC and can deliver pulsed currents up to 2 A. These
products are particularly suited for low-voltage, low-cur-
rent applications, such as small servo motor control,
power MOSFET gate drivers, and other switching appli-
cations.
D
D
S
G
1
TO-92
G
SOT-23
1. Source 2. Gate 3. Drain
(TO-236AB)
S
2N7002/NDS7002A
Ordering Information
Part Number
2N7000
2N7000_D74Z
2N7000_D75Z
2N7000_D26Z
2N7002
NDS7002A
Marking
2N7000
2N7000
2N7000
2N7000
702
712
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
SOT-23 3L
SOT-23 3L
Packing Method
Bulk
Ammo
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Min Order Qty /
Immediate Pack
Qty
10000 / 1000
2000 / 2000
2000 / 2000
2000 / 2000
3000 / 3000
3000 / 3000
© 1998 Fairchild Semiconductor Corporation
2N7000 / 2N7002 / NDS7002A Rev. 2.10
1
www.fairchildsemi.com
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