2N7000_D74Z 查看數據表（PDF） - Fairchild Semiconductor

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2N7000_D74Z

N-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

Electrical Characteristics (Continued)

Symbol

Parameter

On Characteristics

VGS(th) Gate Threshold Voltage

RDS(ON) Static Drain-Source

On-Resistance

VDS(ON) Drain-Source On-Voltage

ID(ON) On-State Drain Current

gFS Forward

Transconductance

Conditions

Type

VDS = VGS, ID = 1 mA

VDS = VGS, ID = 250 A

2N7000

2N7002

NDS7002A

VGS = 10 V,

ID = 500 mA

2N7000

VGS = 10 V,

ID = 500 mA, TC = 125°C

VGS = 4.5 V, ID = 75 mA

VGS = 10 V,

ID = 500 mA

2N7002

VGS = 10 V,

ID = 500 mA, TC = 100°C

VGS = 5 V,

ID = 50 mA

VGS = 5 V,

ID = 50 mA, TC = 100°C

VGS = 10 V,

ID = 500 mA

NDS7002A

VGS = 10 V,

ID = 500 mA, TC = 125°C

VGS = 5 V,

ID = 50 mA

VGS = 5 V,

ID = 50 mA, TC = 125°C

VGS = 10 V,

ID = 500 mA

2N7000

VGS = 4.5 V,

ID = 75 mA

VGS = 10 V,

ID = 500 mA

2N7002

VGS = 5.0 V,

ID = 50 mA

VGS = 10 V,

ID = 500 mA

NDS7002A

VGS = 5.0 V,

ID = 50 mA

VGS = 4.5 V,

VDS = 10 V

2N7000

VGS = 10 V,

VDS  2 VDS(on)

2N7002

VGS = 10 V,

VDS  2 VDS(on)

NDS7002A

VDS= 10 V,

ID = 200 mA

2N7000

VDS 2VDS(ON),

ID = 200 mA

2N7002

VDS 2VDS(ON),

ID = 200 mA

NDS7002A

Min. Typ. Max. Unit

0.8

2.1

3

V

1

2.1

2.5

1.2

5



1.9

9

1.8

5.3

1.2

7.5

1.7 13.5

1.7

7.5

2.4 13.5

1.2

2

2

3.5

1.7

3

2.8

5

0.6

2.5

V

0.14 0.4

0.6 3.75

0.09 1.5

0.6

1

0.09 0.15

75

600

mA

500 2700

500 2700

100 320

mS

80

320

80

320

© 1998 Fairchild Semiconductor Corporation

2N7000 / 2N7002 / NDS7002A Rev. 2.10

3

www.fairchildsemi.com

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