H15R1202 查看數據表（PDF） - Infineon Technologies

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H15R1202

Reverse Conducting IGBT with monolithic body diode

Infineon Technologies 

IHW15N120R2

Soft Switching Series

Dynamic Characteristic

Input capacitance

Ciss

VCE=25V,

-

Output capacitance

Coss

VGE=0V,

-

Reverse transfer capacitance

Crss

f=1MHz

-

Gate charge

QGate

VCC=960V, IC=15A

-

VGE=15V

Internal emitter inductance

LE

-

measured 5mm (0.197 in.) from case

1530

49

39

133

13

- pF

-

-

- nC

- nH

Switching Characteristic, Inductive Load, at Tj=25 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-off delay time

Fall time

Turn-off energy

Total switching energy

td(off)

tf

Eoff

Ets

Tj=25°C,

VCC=600V,IC=15A

VGE=0 /15V,

RG=14.8Ω,

Lσ2)=230nH,

Cσ2)=39pF

min.

-

-

-

-

Value

typ.

Unit

max.

282

-

62

-

0.9

-

0.9

-

Switching Characteristic, Inductive Load, at Tj=175 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-off delay time

Fall time

Turn-off energy

Total switching energy

td(off)

tf

Eoff

Ets

Tj=175°C

VCC=600V,IC=15A,

VGE= 0 /15V,

RG= 14.8Ω,

Lσ=230nH2),

Cσ=39pF2)

min.

-

-

-

-

Value

typ.

342

90

1.3

1.3

Unit

max.

-

-

-

-

2) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.

Power Semiconductors

3

Rev. 1.2 May 06

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