H15R1202 查看數據表（PDF） - Infineon Technologies

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H15R1202

Reverse Conducting IGBT with monolithic body diode

Infineon Technologies 

IHW15N120R2

Soft Switching Series

100ns

td(off)

tf

100ns

td(off)

tf

10ns

0A

10A

20A

Figure 9.

IC, COLLECTOR CURRENT

Typical switching times as a

function of collector current

(inductive load, TJ=175°C,

VCE=600V, VGE=0/15V, RG=14.8Ω,

Dynamic test circuit in Figure E)

10ns

10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω

RG, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, TJ=175°C,

VCE=600V, VGE=0/15V, IC=15A,

Dynamic test circuit in Figure E)

100ns

td(off)

6V

5V

tf

4V

3V

max.

typ.

min.

10ns

25°C 50°C 75°C 100°C 125°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE=600V,

VGE=0/15V, IC=15A, RG=14.8Ω,

Dynamic test circuit in Figure E)

2V

-50°C

0°C

50°C

100°C

TJ, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(IC = 0.4mA)

Power Semiconductors

6

Rev. 1.2 May 06

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