BSS84PW16327XT 查看數據表（PDF） - Infineon Technologies

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BSS84PW16327XT

SIPMOS Small-Signal-Transistor

Infineon Technologies 

BSS84PW

SIPMOS® Small-Signal-Transistor

Features

· P-Channel

· Enhancement mode

· Avalanche rated

· Logic Level

· dv/dt rated

Product Summary

Drain source voltage

Drain-source on-state resistance

Continuous drain current

VDS

RDS(on)

ID

-60 V

8W

-0.15 A

3

• Qualified according to AEC Q101

• Halogen-free according to IEC61249-2-21

2

1

VSO05561

Type

BSS84PW

Package Tape and Reel Marking

PG-SOT-323 H6327:3000pcs/r. YBs

Maximum Ratings,at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Continuous drain current

ID

TA = 25 °C

Pulsed drain current

TA = 25 °C

ID puls

Avalanche energy, single pulse

W ID = -0.15 A , VDD = -25 V, RGS = 25

Avalanche energy, periodic limited by Tjmax

Reverse diode dv/dt

EAS

EAR

dv/dt

IS = -0.15 A, VDS = -48 V, di/dt = 200 A/µs,

Tjmax = 150 °C

Gate source voltage

Power dissipation

TA = 25 °C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

VGS

Ptot

Tj , Tstg

ESD Class

JESF22-A114-HBM

Pin 1 PIN 2

G

S

Value

-0.15

-0.6

2.61

0.03

6

±20

0.3

-55...+150

55/150/56

Class 0

PIN 3

D

Unit

A

mJ

kV/µs

V

W

°C

Rev 2.0

Page 1

2016-06-21

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