BSS84PW16327XT 查看數據表（PDF） - Infineon Technologies

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BSS84PW16327XT

SIPMOS Small-Signal-Transistor

Infineon Technologies 

BSS84PW

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min. typ. max.

Dynamic Characteristics

Transconductance

gfs

£ VDS 2*ID*RDS(on)max , 0.08 0.16

-S

ID=0.15A

Input capacitance

Ciss

VGS=0V, VDS=-25V,

- 15.3 19.1 pF

Output capacitance

Coss

f=1MHz

-

5.8 7.3

Reverse transfer capacitance Crss

-

3 3.8

Turn-on delay time

Rise time

t d(on)

VDD=-30V, VGS=-4.5V,

-

6.7 10 ns

tr

W ID=-0.12A, RG=25

- 16.2 24.3

Turn-off delay time

t d(off)

-

8.6 12.9

Fall time

tf

- 20.5 30.8

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

Qgs

VDD=-48V, ID=-0.15A

Qgd

Qg

VDD=-48V, ID=-0.15A,

VGS=0 to -10V

V(plateau) VDD=-48V, ID=-0.15A

Reverse Diode

Inverse diode continuous

IS

forward current

T A=25°C

Inverse diode direct current, ISM

pulsed

Inverse diode forward voltage VSD

Reverse recovery time

trr

Reverse recovery charge

Qrr

VGS=0V, IF=-0.15A

VR=-30V, IF=lS,

diF/dt=100A/µs

- 0.25 0.38 nC

-

0.3 0.45

-

1 1.5

- -3.4 - V

-

- -0.15 A

-

- -0.6

- -0.84 -1.12 V

- 23.6 35.4 ns

- 11.6 17.4 nC

Rev 2.0

Page 3

2016-06-21

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