ACS760ELF-20B(2013) 查看數據表（PDF） - Allegro MicroSystems

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ACS760ELF-20B
(Rev.:2013)

12 V High-Side Hot-Swap Hall Effect Based Current Monitor IC

Allegro MicroSystems 

ACS760ELF-20B 12 V High-Side Hot-Swap Hall Effect Based Current Monitor IC

OPERATING CHARACTERISTICS, (continued) Valid at VCC = 12 V, TA = 0°C to 85°C, unless otherwise noted

Characteristic

Symbol

Test Conditions

Min.

Typ. Max. Units

IP Fault Switchpoint Tolerance3

EPF

tIPFLmax

Percentage error of IPF

Measured from FAULT signal to VGATE < 1 V, OCDLY pin

open, load step from 17 A to 45 A in 100 ns

–15

–

–

8

15

%

12

μs

IPF Fault Signal Delay4

Measured from FAULT signal to VGATE < 1 V, 2.2 nF capaci-

tIPFH tance from OCDLY pin to GND, load step from 17 A to 45 A

–

425

–

μs

in 100 ns

Maximum Short Circuit/Overcurrent

Fault Threshold5

ISC

60

110 160

A

Short Circuit/Overcurrent Fault Gate

Delay

tSC Measured from FAULT signal to VGATE < 1 V, Includes tGF

–

2

3

μs

VOLTAGE FAULT PERFORMANCE CHARACTERISTICS

Internal Pull Down Resistance Between

EN and GND

REN

TA = 25°C

–

100

–

kΩ

EN Voltage Threshold6

S1 Short Circuit Detection Current7

S1 Short Circuit Detection Delay

VENH IC enabled when VEN > VENH

1.93

–

–

V

VENL IC disabled when VEN < VENL

–

–

1

V

IS1S IC enabled or disabled

0.9

1.5

2.1

A

tS1S

Measured from disablement of the device to detection of an

S1 fault

–

–

45

μs

S1SHORT Output Voltage

VS1SOL IS1SHORT = 3 mA sink current

S1SHORT Output Leakage Current

IS1SIH VS1SHORT = 3.3 V

FAULT Output Voltage

VFAULTOL IFAULT = 3 mA sink current

FAULT Output Leakage Current

IFAULTIH VFAULT = 3.3 V

GATE DRIVE PERFORMANCE CHARACTERISTICS

–

–

0.4

V

–

–

5

μA

–

–

0.4

V

–

–

5

μA

Internal Charge Pump Voltage

Average GATE Drive Current

Charge Pump Switching Frequency

GATE Rise Time

VCP TA = 25°C

– VCC + 10 –

IGD VCC = 12 V, TA = 25°C

25

50

–

fCP TA = 25°C

–

1

–

TA = 25°C, external MOSFET S1 gate capacitance = 5.8 nF,

measured from VGATE = 0 V to 15 V, CG pin open, no output –

1

–

load capacitance

tGR

TA = 25°C, external MOSFET S1 gate capacitance = 5.8 nF,

measured from VGATE = 0 V to 15 V, 3.75 μF capacitor con-

–

500

–

nected between CG and GND pins

V

μA

MHz

ms

ms

GATE Sink Resistance

GATE Discharge Current

GATE Shutdown Delay

GATE Maximum Fall Time

RGsink

IGD

tGSD

tGF

VGATE = VCC + 10 V

Measured from fault event to start of GATE pull down

Measured from VGATE = 90% of maximum to VGATE < 1 V,

external MOSFET S1 gate capacitance = 5.8 nF. EN pin

switched from high to low, FAULT or S1SHORT signal

–

20

30

Ω

–

1000

–

mA

–

200

–

ns

–

800

–

ns

CG Output Current

ISLEW TA = 25°C

18

20

22

μA

1The small signal, AC bandwidth of this device is approximately 90 kHz.

2This test requires currents sufficient to swing the output driver between the fully off state and the saturated state. Assumes that the VIOUT pin is con-

nected to an analog-to-digital converter that saturates at 2.5 V. The VIOUT signal is linear above 2.5 V, however, this test is NOT intended to indicate a

range of linear operation.

3Assumes that a 1% resistor with a flat temperature coefficient is connected between the ISET and GND pins.

4Can exceed tIPFH(max) delay period via the use of a larger external capacitor. Voltage trip point on the high side of the capacitor is 3.85 V.

5This parameter is internally programmed and cannot be controlled by the end user.

6The FAULT output signal is latched. After a latched fault event, the device will be reset only when either: (a) VEN drops below VENL, or (b) the power to

the device (applied to the IP+ pins) is toggled off and then back on.

7The voltage on the gate of the external MOSFET S1 does not need to be < 1 V in order for the device to detect an S1 short circuit condition. The

device does detect a faulty S1 when the gate of S1 is shorted to the S1 source or drain terminal.

Allegro MicroSystems, LLC

6

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

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