BS616LV1010 查看數據表（PDF） - Brilliance Semiconductor

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BS616LV1010

Very Low Power CMOS SRAM 64K X 16 bit

Brilliance Semiconductor 

n ABSOLUTE MAXIMUM RATINGS (1)

SYMBOL PARAMETER

VTERM

TBIAS

Terminal Voltage with

Respect to GND

Temperature Under

Bias

TSTG

Storage Temperature

PT

Power Dissipation

IOUT

DC Output Current

RATING UNITS

-0.5(2) to 7.0

V

-40 to +125

OC

-60 to +150

OC

1.0

W

20

mA

1. Stresses greater than those listed under ABSOLUTE

MAXIMUM RATINGS may cause permanent damage to the

device. This is a stress rating only and functional operation of

the device at these or any other conditions above those

indicated in the operational sections of this specification is not

implied. Exposure to absolute maximum rating conditions for

extended periods may affect reliability.

2. –2.0V in case of AC pulse width less than 30 ns.

BS616LV1010

n OPERATING RANGE

RANG

Commercial

Industrial

AMBIENT

TEMPERATURE

0OC to + 70OC

-40OC to + 85OC

VCC

2.4V ~ 5.5V

2.4V ~ 5.5V

n CAPACITANCE (1) (TA = 25OC, f = 1.0MHz)

SYMBOL PAMAMETER CONDITIONS MAX. UNITS

CIN

Input

Capacitance

CIO

Input/Output

Capacitance

VIN = 0V

VI/O = 0V

6

pF

8

pF

1. This parameter is guaranteed and not 100% tested.

n DC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)

PARAMETER

NAME

PARAMETER

VCC

Power Supply

TEST CONDITIONS

MIN. TYP.(1) MAX. UNITS

2.4

--

5.5

V

VIL

Input Low Voltage

-0.5(2)

--

0.8

V

VIH

Input High Voltage

IIL

Input Leakage Current

VIN = 0V to VCC

CE= VIH

ILO

VI/O = 0V to VCC,

Output Leakage Current

CE= VIH or OE = VIH

VOL

Output Low Voltage

VCC = Max, IOL = 2.0mA

2.2

--

VCC+0.3(3)

V

--

--

1

uA

--

--

1

uA

--

--

0.4

V

VOH

Output High Voltage

VCC = Min, IOH = -1.0mA

ICC(5)

ICC1

ICCSB

ICCSB1(6)

Operating Power Supply

Current

CE = VIL,

IIO = 0mA, f = FMAX(4)

Operating Power Supply CE = VIL,

Current

IIO = 0mA, f = 1MHz

Standby Current – TTL

CE = VIH,

IIO = 0mA

Standby Current – CMOS CE≧VCC-0.2V

VIN≧VCC-0.2V or VIN≦0.2V

1. Typical characteristics are at TA=25OC and not 100% tested.

2. Undershoot: -1.0V in case of pulse width less than 20 ns.

3. Overshoot: VCC+1.0V in case of pulse width less than 20 ns.

4. FMAX=1/tRC(MIN.).

5. ICC (MAX.) is 24mA/44mA at VCC=3.0V/5.0V and TA=70OC.

6. ICCSB1(MAX.) is 0.5uA/3.0uA at VCC=3.0V/5.0V and TA=70OC.

R0201-BS616LV1010

3

2.4

VCC=3.0V

--

VCC=5.0V

VCC=3.0V

--

VCC=5.0V

VCC=3.0V

--

VCC=5.0V

VCC=3.0V

--

VCC=5.0V

--

--

--

--

0.02

0.4

--

V

25

mA

45

2

mA

5

0.5

mA

1.0

1.5

uA

5.0

Revision 2.6

May.

2006

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