BSR12 查看數據表（PDF） - NXP Semiconductors.
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BSR12 Datasheet PDF : 12 Pages
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Philips Semiconductors
PNP switching transistor
Product specification
BSR12
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
ICES
V(BR)CBO
V(BR)CES
V(BR)EBO
VCEOsust
collector cut-off current
IE = 0; VCB = −10 V
−
IE = 0; VCB = −10 V; Tamb = 125 °C −
collector cut-off current
VBE = 0; VCE = −10 V
−
breakdown voltage
IE = 0; IC = −10 µA
−15
breakdown voltage
VBE = 0; IC = −10 µA
−15
breakdown voltage
IC = 0; IE = −100 µA
−3
collector-emitter sustaining IB = 0; IC = −10 mA
−15
voltage
VCEsat
VBEsat
hFE
fT
collector-emitter saturation
voltage
base-emitter saturation
voltage
DC current gain
transition frequency
IC = −10 mA; IB = −1 mA; note 1
IC = −50 mA; IB = −5 mA; note 1
IC = −100 mA; IB = −10 mA; note 1
IC = −10 mA; IB = −1 mA; note 1
IC = −50 mA; IB = −5 mA; note 1
IC = −100 mA; IB = −10 mA; note 1
IC = −1 mA; VCE = −1 V; note 1
IC = −10 mA; VCE = −1 V; note 1
IC = −50 mA; VCE = −1 V; note 1
IC = −50 mA; VCE = −1 V;
Tamb = 55 °C; note 1
IC = −100 mA; VCE = −1 V; note 1
IC = −50 mA; VCE = −10 V;
f = 500 MHz
−
−
−
−725
−800
−900
30
30
30
30
20
1.5
Cc
collector capacitance
IE = Ie = 0; VCB = −5 V
−
Ce
emitter capacitance
IC = Ic = 0; VEB = −0.5 V
−
Switching time (see Fig.2)
ton
turn-on time
toff
turn-off time
Vi = −6.85 V; VBB = 0 V;
−
ICon = −30 mA; IBon = −3.0 mA
Vi = 11.7 V; VBB = −9.85 V;
−
ICon = −30 mA; IBon = −3 mA;
IBoff = 3 mA
Note
1. Pulse test: tp = 300 µs; δ = 0.01.
TYP.
−
−
−
−
−
−
−
−
−180
−
−
−
−
−
−
−
−
−
−
−
−
−
−
MAX.
−50
−5
−50
−
−
−
−
−130
−270
−450
−920
−1 150
−1 500
−
−
120
−
−
−
4.5
6
20
30
UNIT
nA
µA
nA
V
V
V
V
mV
mV
mV
mV
mV
mV
GHz
pF
pF
ns
ns
1999 Jul 23
4
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