BSR12 查看數據表（PDF） - NXP Semiconductors.
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BSR12 Datasheet PDF : 12 Pages
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Philips Semiconductors
PNP switching transistor
Product specification
BSR12
VBB
handbook, halfpage
Vi
C
50 Ω
R2
R3
VCC = −3 V
DUT
R1
Vo
MGS460
R1 = 94 Ω; R2 = 1 kΩ; R3 = 2 kΩ; C = 0.1 µF.
Pulse generator: Pulse duration tp = 400 ns. Rise time tr < 1 ns. Output impedance ZO = 50 Ω.
Sampling scope: Rise time tr < 1 ns. Input impedance Zi = 100 kΩ.
Fig.2 Test circuit for switching times.
70
handbook, full pagewidth
hFE
60
50
40
30
20
−10−1
VCE = − 1 V; Tamb = 25°C.
1999 Jul 23
MGS461
typ
−1
−10
−102
IC (mA)
−103
Fig.3 DC current gain; typical values.
5
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