CY7C1049BV33 查看數據表（PDF） - Cypress Semiconductor

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CY7C1049BV33

512K x 8 Static RAM

Cypress Semiconductor 

CY7C1049BV33

DC Electrical Characteristics Over the Operating Range (continued)

Parameter

Description

VOH

Output HIGH Voltage

VOL

Output LOW Voltage

VIH

Input HIGH Voltage

VIL

Input LOW Voltage[2]

IIX

Input Load Current

IOZ

Output Leakage

Current

ICC

VCC Operating

Supply Current

ISB1

Automatic CE

Power-Down Current

—TTL Inputs

ISB2

Automatic CE

Power-Down Current

—CMOS Inputs

Test Conditions

VCC = Min.,

IOH = –4.0 mA

VCC = Min.,

IOL = 8.0 mA

GND < VI < VCC

GND < VOUT < VCC,

Output Disabled

VCC = Max.,

f = fMAX = 1/tRC

Com’l

Ind’l

Max. VCC, CE > VIH

VIN > VIH or

VIN < VIL, f = fMAX

Max. VCC,

CE > VCC – 0.3V,

VIN > VCC – 0.3V,

or VIN < 0.3V, f = 0

Com’l/Ind’l

Com’l L

-20

Min.

Max.

2.4

0.4

2.2 VCC + 0.5

–0.5

0.8

–1

+1

–1

+1

160

170

30

8

0.5

-25

Min. Max.

2.4

0.4

2.2

–0.5

–1

–1

VCC + 0.5

0.8

+1

+1

150

170

30

8

0.5

Unit

V

V

V

V

µA

µA

mA

mA

mA

mA

mA

Capacitance[3]

Parameter

CIN

COUT

Description

Input Capacitance

I/O Capacitance

Test Conditions

TA = 25°C, f = 1 MHz,

VCC = 3.3V

Max.

Unit

8

pF

8

pF

AC Test Loads and Waveforms

3.3V

R1 317Ω

OUTPUT

30 pF

INCLUDING

JIG AND

SCOPE

(a)

THÉVENIN EQUIVALENT

OUTPUT

167Ω

R2

351Ω

(b)

1.73V

3.3V

GND

RiseTime:1 V/ns

ALL INPUT PULSES

90%

10%

90%

10%

Fall time:

1 V/ns

Note:

3. Tested initially and after any design or process changes that may affect these parameters.

Document #: 38-05139 Rev. *A

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