FB190SA10(2018) 查看數據表（PDF） - Vishay Semiconductors
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FB190SA10 Datasheet PDF : 9 Pages
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www.vishay.com
VS-FB190SA10
Vishay Semiconductors
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction and storage temperature range
Junction to case
Case to heatsink
Weight
TJ, TStg
RthJC
RthCS
Flat, greased surface
Mounting torque
Torque to terminal
Torque to heatsink
Case style
MIN.
-55
-
-
-
-
-
TYP. MAX. UNITS
-
150
°C
-
0.22
0.05
-
°C/W
30
-
g
- 1.1 (9.7) Nm (lbf.in)
- 1.8 (15.9) Nm (lbf.in)
SOT-227
ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to source breakdown voltage
Breakdown voltage temperature
coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
Static drain to source on-resistance
Gate threshold voltage
RDS(on)
VGS(th)
VGS = 10 V, ID = 180 A
VDS = VGS, ID = 250 μA
Forward transconductance
Drain to source leakage current
Gate to source forward leakage
Total gate charge
Gate to source charge
Gate to drain (“Miller”) charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Internal source inductance
Input capacitance
Output capacitance
Reverse transfer capacitance
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Ciss
Coss
Crss
VDS = 25 V, ID = 180 A
VDS = 100 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 125 °C
VGS = 20 V
VGS = - 20 V
ID = 180 A
VDS = 80 V
VGS = 10 V
VDD = 50 V
ID = 180 A
Rg = 2.0(internal)
RD = 0.27
Between lead, and center of die contact
VGS = 0 V
VDS = 25 V
f = 1.0 MHz
MIN.
100
-
-
2.0
93
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
0.093
5.4
3.3
-
-
-
-
-
250
40
110
45
351
181
335
5.0
10 700
2800
1300
MAX.
-
-
6.5
4.35
-
50
500
200
- 200
-
-
-
-
-
-
-
-
-
-
-
UNITS
V
V/°C
m
V
S
μA
nA
nC
ns
nH
pF
SOURCE-DRAIN RATINGS AND CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX.
Continuous source current
(body diode)
Pulsed source current (body diode)
IS
MOSFET symbol
D
-
-
190
showing the integral
ISM
reverse p-n junction diode. G
-
-
740
S
Diode forward voltage
VSD
TJ = 25 °C, IS = 180 A, VGS = 0 V
-
1.0
1.3
Reverse recovery time
trr
TJ = 25 °C, IF = 180 A, dI/dt = 100 A/μs
-
300
-
Reverse recovery charge
Qrr
-
2.6
-
Forward turn-on time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD)
UNITS
A
V
ns
μC
Revision: 02-Oct-2018
2
Document Number: 93459
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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