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1
VS-FB190SA10
Vishay Semiconductors
0.75
0.5
0.1
0.3
0.2
0.1
Single pulse
(thermal resistance)
DC
0.01
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (s)
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction to Case
15 V
L
VDS
RG
20 V
tp
D.U.T
IAS
0.01 Ω
Driver
+
- VDD
A
Fig. 13 - Unclamped Inductive Test Circuit
1500
1200
ID
TOP
71A
100A
BOTTOM 160A
900
600
300
0
25
50
75
100
125
150
Starting TJ , Junction Temperature( °C)
Fig. 15 - Maximum Avalanche Energy vs. Drain Current
V (B R )D S S
tp
IAS
Fig. 14 - Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig. 16 - Basic Gate Charge Waveform
Revision: 02-Oct-2018
5
Document Number: 93459
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