FB190SA10 查看數據表（PDF） - Vishay Semiconductors
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FB190SA10 Datasheet PDF : 9 Pages
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VS-FB190SA10
Vishay Semiconductors
Power MOSFET, 190 A
THERMAL RESISTANCE
PARAMETER
Junction to case
Case to heatsink, flat, greased surface
SYMBOL
RthJC
RthCS
MIN.
-
-
TYP.
-
0.05
MAX.
0.22
-
UNITS
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to source breakdown voltage
Breakdown voltage temperature
coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
Static drain to source on-resistance
RDS(on)
VGS = 10 V, ID = 180 A
Gate threshold voltage
Forward transconductance
VGS(th)
gfs
VDS = VGS, ID = 250 μA
VDS = 25 V, ID = 180 A
Drain to source leakage current
VDS = 100 V, VGS = 0 V
IDSS
VDS = 80 V, VGS = 0 V, TJ = 125 °C
Gate to source forward leakage
VGS = 20 V
IGSS
VGS = - 20 V
Total gate charge
Gate to source charge
Gate to drain ("Miller") charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Internal source inductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
ID = 180 A
VDS = 80 V
VGS = 10 V
VDD = 50 V
ID = 180 A
Rg = 2.0(internal)
RD = 0.27
Between lead, and center of die contact
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VGS = 0 V
VDS = 25 V
f = 1.0 MHz
MIN.
100
-
-
2.0
93
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
MAX. UNITS
-
V
0.093
-
V/°C
0.0054 0.0065
3.3
4.35
V
-
-
S
-
50
μA
-
500
-
200
nA
-
- 200
250
-
40
-
nC
110
-
45
-
351
-
ns
181
-
335
-
5.0
-
nH
10 700 -
2800
-
pF
1300
-
SOURCE-DRAIN RATINGS AND CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX.
Continuous source current
(body diode)
Pulsed source current (body diode)
IS
MOSFET symbol
D
-
-
190
showing the integral
G
ISM
reverse p-n junction diode.
-
-
740
S
Diode forward voltage
VSD
TJ = 25 °C, IS = 180 A, VGS = 0 V
-
1.0
1.3
Reverse recovery time
trr
TJ = 25 °C, IF = 180 A, dI/dt = 100 A/μs
-
300
-
Reverse recovery charge
Forward turn-on time
Qrr
-
2.6
-
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD)
UNITS
A
V
ns
μC
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For technical questions, contact: indmodules@vishay.com
Document Number: 93459
Revision: 12-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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