FB190SA10 查看數據表（PDF） - Vishay Semiconductors
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FB190SA10 Datasheet PDF : 9 Pages
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VS-FB190SA10
Vishay Semiconductors
Power MOSFET, 190 A
1000
TJ = 150° C
100
10
TJ = 25° C
1
VGS = 0 V
0.1
0.2
0.6
1.0
1.4
1.8
VSD ,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source Drain Diode Forward Voltage
10000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
100
100us
1ms
10
10ms
TC = 25° C
TJ = 150° C
Single Pulse
1
1
10
100
VDS , Drain-to-Source Voltage (V)
1000
Fig. 8 - Maximum Safe Operating Area
175
150
125
DC
100
75
50
25
0
25 50 75 100 125 150 175 200
ID , Drain Current in DC (A)
Fig. 9 - Maximum Drain Current vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+
-
VDD
Fig. 10a - Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
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4
For technical questions, contact: indmodules@vishay.com
Document Number: 93459
Revision: 12-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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