IRF120 查看數據表（PDF） - Intersil
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IRF120 Datasheet PDF : 7 Pages
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IRF120, IRF121, IRF122, IRF123
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF120
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . .VDS
100
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR
100
Continuous Drain Current. . .
TC = 100oC . . . . . . . . . . . .
........
........
...
...
...
...
.........
.........
ID
ID
9.2
6.5
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM
37
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD
60
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.4
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . Tpkg
36
-55 to 175
300
260
IRF121
80
80
9.2
6.5
37
±20
60
0.4
36
-55 to 175
300
260
IRF122
100
100
8.0
5.6
32
±20
60
0.4
36
-55 to 175
300
260
IRF123
80
80
8.0
5.6
32
±20
60
0.4
36
-55 to 175
300
260
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
IRF120, IRF122
BVDSS ID = 250µA, VGS = 0V
(Figure 10)
MIN TYP MAX UNITS
100 -
-
V
IRF121, IRF123
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
IRF120, IRF121
80
-
-
V
VGS(TH) VDS = VGS, ID = 250µA
2.0 - 4.0 V
IDSS VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 150oC -
-
25 µA
- 250 µA
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
9.2 -
-
A
IRF122, IRF123
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
IRF120, IRF121
IRF122, IRF123
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
8.0 -
-
A
IGSS VGS = ±20V
rDS(ON) ID = 5.6A, VGS = 10V
(Figure 8, 9)
-
- ±100 nA
- 0.25 0.27 Ω
0.27 0.36 Ω
gfs VDS > ID(ON) x rDS(ON)MAX, ID = 5.6A
(Figure 12)
2.9 4.0 -
S
td(ON) VDD = 50V, ID ≈ 9.2A, RGS = 18Ω, RL = 5.1Ω
- 8.8 13 ns
(Figures 17, 18) MOSFET Switching Times are
tr
Essentially Independent of Operating
-
30 45
ns
Temperature
td(OFF)
-
19 29
ns
tf
-
20 30
ns
Qg(TOT) VGS = 10V, ID = 5.6A, VDS = 0.8 x Rated BVDSS, -
9.7 15
nC
Ig(REF) = 1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Qgs Operating Temperature
- 2.2 -
nC
Qgd
- 2.3 -
nC
2-2
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