RMLV0408E 查看數據表（PDF） - Renesas Electronics

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产品描述 (功能)

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RMLV0408E

4Mb Advanced LPSRAM (512k word × 8bit)

Renesas Electronics 

RMLV0408E Series

Timing Waveforms

Read Cycle

Preliminary

A0~18

CS#

WE#

VIH

WE# = “H” level

OE#

I/O0~7

tRC

Valid address

tAA

tACS

t *12,13

CLZ

t *11,12,13

CHZ

tOE

tOLZ *12,13

High impedance

t *11,12,13

OHZ

tOH

Valid Data

Note

11. tCHZ and tOHZ are defined as the time when the I/O pins enter a high-impedance state and are not referred to

the I/O levels.

12. This parameter is sampled and not 100% tested.

13. At any given temperature and voltage condition, tCHZ max is less than tCLZ min, and tOHZ max is less than tOLZ

min, for any device.

R10DS0217EJ0001 Rev.0.01

2013.09.10

Page 6 of 10

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