SC1205 查看數據表（PDF） - Samtec

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SC1205

High Speed Synchronous Power MOSFET Driver

Samtec 

SC1205

POWER MANAGEMENT

Electrical Characteristics (Cont.)

Parameter

CO

High Level Input Voltage

Low Level Input Voltage

Thermal Shutdown

Over Temperature Trip Point

Hysteresis

High Side Driver

Peak Output Current

Output Resistance

Low-Side Driver

Peak Output Current

Output Resistance

Symbol

Conditions

Min

VIH

2.0

VIL

TOTP

THYST

IPKH

RsrcTG

RsinkTG

duty cycle < 2%, tpw < 100 µs,

TJ = 125°C, VBST - VDRN = 4.5V,

VTG = 4.0V (src) +VDRN

or VTG = 0.05V (sink) +VDRN

IPKL

RsrcBG

RsinkBG

duty cycle < 2%, tpw < 100 µs,

TJ = 125oC,

VV S = 4.6V, VBG = 4V (src),

or VLOWDR = 0.5V (sink)

AC Operating Specifications

Parameter

Symbol

Conditions

Min

High Side Driver

Rise Time

Fall Time

Propagation Delay Time,

TG Going High

Propagation Delay Time,

TG Going Low

Low-Side Driver

trTG1

tfTG

tpdhTG

tpdlTG

CI = 3nF, VBST - VDRN = 4.6V,

TJ + 125°C

CI = 3nF, VBST - VDRN = 4.6V,

TJ + 125°C

CI = 3nF, VBST - VDRN = 4.6V,

TJ + 125°C

CI = 3nF, VBST - VDRN = 4.6V,

TJ + 125°C

Rise Time

trBG

CI = 3nF, V V S = 4.6V,

TJ + 125°C

Note:

(1) This device is ESD sensitive. Use of standard ESD handling precautions is required.

 2004 Semtech Corp.

3

Typ

165

10

3

1

.7

3

1.2

1.0

Typ

14

12

20

15

15

Max

Units

V

0.8

V

°C

°C

A

Ω

A

Ω

Ω

Max

Units

23

ns

19

ns

32

ns

24

ns

24

ns

www.semtech.com

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