SPD30N03L 查看數據表（PDF） - Siemens AG
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SPD30N03L Datasheet PDF : 9 Pages
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Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area1)
SPD30N03L
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
RthJA
-
- 1.25 K/W
-
-
100
-
-
75
-
-
50
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS
ID = 80 µA
Zero gate voltage drain current
VDS = 30 V, VGS = 0 V, Tj = 25 °C
VDS = 30 V, VGS = 0 V, Tj = 150 °C
V(BR)DSS 30
-
-V
VGS(th)
1.2
1.6
2
I DSS
µA
0.1 1
-
- 100
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 4.5 V, ID = 30 A
VGS = 10 V, ID = 30 A
I GSS
RDS(on)
-
10 100 nA
Ω
- 0.013 0.018
- 0.0076 0.012
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
Semiconductor Group
2
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