SPD30N03L 查看數據表（PDF） - Siemens AG
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SPD30N03L Datasheet PDF : 9 Pages
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Avalanche Energy EAS = f (Tj)
parameter: ID = 30 A, VDD = 25 V
RGS = 25 Ω
250
mJ
Typ. gate charge
VGS = f (QGate)
parameter: ID puls = 30 A
SPD30N03L
16
V
SPD30N03L
12
150
10
8
100
0,2 VDS max
0,8 VDS max
6
4
50
2
0
20 40 60 80 100 120 140 °C 180
Tj
Drain-source breakdown voltage
V(BR)DSS = f (Tj)
0
0 10 20 30 40 50 60 nC 80
QGate
SPD30N03L
37
V
35
34
33
32
31
30
29
28
27-60
-20
20
Semiconductor Group
60 100 140 °C 200
Tj
8
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