SW7N60 查看數據表（PDF） - Unspecified
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SW7N60 Datasheet PDF : 5 Pages
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SAMWIN
SW7N60
Electrical Characteristics (Tc=25℃ unless otherwise noted)
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
△BVDSS/△
Tj
Drain- Source Breakdown Voltage
Breakdown Voltage Temperature
coefficient
IDSS
Drain-Source Leakage Current
Gate-Source Leakage Current
IGSS
Gate-Source Leakage Reverse
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-state
Resistance
VGS=0V,ID=250uA
ID=250uA,referenced to 25℃
VDS=600V, VGS=0V
VDS=480V, Tc=125℃
VGS=30V,VDS=0V
VGS=-30V, VDS=0V
VDS=VGS,ID=250uA
VGS=10V,ID=3.5A
Value
Units
Min Typ Max
600
-
-
V
-
0.67
-
V/℃
-
-
1
uA
-
-
100
nA
-
-
-100
nA
3.0
-
5.0
V
-
0.85
1
ohm
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V,VDS=25V, f=1MHz
Switching Characteristics
td(on)
Turn-on Delay Time
tr
Rise Time
VDD=300V,ID=7.0A
td(off)
Turn-off Delay Time
tf
Fall Time
(Note4,5)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V,VGS=10V, ID=7.0A
Qgd
Gate-Drain Charge (Miller Charge)
(Note4,5)
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
IS
Continuous Source Current
ISM
Pulsed Source Current
Integral Reverse
p-n Junction Diode
in the MOSFET
-
-
-
-
-
-
-
-
-
-
Min.
-
-
1200
150
18
35
79
80
52
30
6.5
13
Typ.
-
-
1500
190
pF
25
70
130
ns
240
100
-
-
nc
-
Max.
7
28
Unit.
A
VSD
Diode Forward Voltage
IS=7.0A,VGS=0V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IS=7.0A,VGS=0V,
dIF/dt=100A/us
※NOTES
1. Repeativity rating: pulse width limited by junction temperature
2. L=19.5mH,IAS=7.0A,VDD=50V,RG=0ohm, Starting TJ=25℃
3. ISD≤7.0A,di/dt≤100A/us,VDD≤BVDSS, Starting TJ=25℃
4. Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
2/6
REV0.2
-
-
1.4
V
-
320
-
ns
-
2.4
-
uc
04.11.1
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