SW7N60 查看數據表（PDF） - Unspecified

零件编号

产品描述 (功能)

比赛名单

SW7N60

N-Channel MOSFET

Unspecified 

SAMWIN

1.2

1.1

1.0

0.9

 Note:

1.VGS=0V

2.ID=250uA

0.8

-100

-50

0

50

100

150

200

T ,Junction Temperatur [oC]

J

Fig 7. Breakdown Voltage Variation vs.

Junction Temperature

100

Operation In This Area

Limted By R

DS(ON)

10

100us

1ms

10ms

DC

1

0.1

1

Note:

1.Tc=25C

2.Tj=150C

3.Single Pulse

10

100

V ,Drain-Source Voltage[V]

D

1000

Fig9. Maximum Safe Operating

SW7N60

3.0

2.5

2.0

1.5

1.0

0.5

0.0

-100

Note:

1.VGS=10V

2.ID=3.5A

-50

0

50

100

150

200

T ,Junction Temperature[oC]

J

Fig 8. On-Resistance Variation vs.

Junction Temperature

8

6

4

2

0

25

50

75

100

125

150

T ,Case Temperature [oC]

c

Fig 10. Maximum Drain Current

Vs. Case Temperature

REV0.2

1

D =0.5

0 .1

0 .0 1

0 .2

0 .1

0 .0 5

0 .0 2

0 .0 1

sin g le p u ls e

N ote:

1.Z (t)=0.88oC/w M ax

 JC

2 .D u ty F ac to r,D = t1/t2

3 .T j-T c= P *Z (t)

DM JC

1E-5

1E -4

1E-3

0 .0 1

0.1

1

10

t ,S q u a re W a v e P u ls e D u ra tio n (s e c )

1

Fig 11. Transient Thermal Response Curve

4/6

04.11.1

Share Link: