TA2123AF 查看數據表（PDF） - Toshiba

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TA2123AF

TOSHIBA Bipolar Integrated Circuit Silicon Monolithic

Toshiba 

TA2123AF

(3) Capacitor

Small temperature coefficient and excellent frequency characteristic is needed by capacitor below.

· Oscillation preventing capacitors for power amplifier output

· Capacitor between VREF and GND

· Capacitor between VCC and GND

· Capacitor between RF OUT and GND

Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Supply voltage

Output current (PW AMP.)

Power dissipation

Operating temperature

Storage temperature

VCC

4.5

V

IO (peak)

100

mA

PD (Note)

750

mW

Topr

-25~75

°C

Tstg

-55~150

°C

Note: Derated above Ta = 25°C in proportion of 6mW / °C

14

2002-10-30

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