TA2123AF 查看數據表（PDF） - Toshiba

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TA2123AF

TOSHIBA Bipolar Integrated Circuit Silicon Monolithic

Toshiba 

Characteristic

Voltage gain 1

Channel balance

Voltage gain 2

Output power

Total harmonic

distortion

Output noise voltage

Cross talk

Ripple rejection ratio

Power amplifier muting

attenuation

Beep signal input

sensitivity

Voltage gain 3

Voltage gain 4

Maximum output

voltage

Muting attenuation

Equalizer on resistance

Ripple filter output voltage

Ripple filter ripple rejection

ratio

Power amplifier on current

Power amplifier off voltage

Power on curent

Power off voltage

Boost on voltage

Boost off voltage

Symbol

GV1

CB

GV2

Po

Test

Cir-

Test Condition

cuit

—

Vo = -22dBV

—

—

Vin (A) = Vin (B) = -Vin (C)

Vo = -22dBV

—

VCC = 1.5V

THD (A) = THD (B) = 10%

THD

Vno

CT3

RR2

ATT2

— Po = 1mW

—

Rg = 600Ω, SW2: b

BPF = 20Hz~20kHz

— Vo = -22dBV

—

VCC = 1V, fr = 100Hz

Vr = -32dBV, BPF = 100Hz

—

Vo = -22dBV

SW5: a→b

SEN

GV3

GV4

Vom2

ATT3

R2

VRF OUT

RR3

I41

V41

I42

V42

V43 (ON)

V43 (OFF)

— Vo = -62dBV, SW5: OPEN

f = 40Hz, Vin = -64dBV

— SW7: Open

Monitor: C-AMP. -GND

f = 40Hz, Vin = -47dBV

— SW7: Open

Monitor: C-AMP. -GND

—

f = 40Hz, THD = 1%

SW3: b, SW7: Open

—

f = 40Hz, Vo = -32dBV

SW7: Open→on

— IL = 100µA, SW7: Open

— VCC = 1V, IRF = 20mA

VCC = 1V, IRF = 20mA

— BPF = 100Hz, fr = 100Hz

Vr = -32dBV

—

—

—

VCC = 0.95V

—

—

—

TA2123AF

Min. Typ. Max. Unit

—

24

—

-1.5

0

+1.5

dB

28

30

32

3

6

—

mW

—

0.1

0.8

%

—

40

80 µVrms

34

43

—

—

70

—

dB

—

72

—

0.7

1.3

2.2 µAp-p

41

44

47

dB

27.5 30.5 33.5

—

86

—

53

—

1.9

0.89 0.92

— mVrms

—

dB

—

kΩ

—

V

35

42

—

dB

5

—

—

µA

0

—

0.3

V

5

—

—

µA

0

—

0.3

V

0.8

— 0.95

V

0

—

0.3

V

16

2002-10-30

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