RD00HVS1(2006) 查看數據表（PDF） - Mitsumi
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RD00HVS1 Datasheet PDF : 6 Pages
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
35
Gp
30
100
Po
90
25
80
20
70
ηｄ
15
60
10
5
0
-15 -10
Ta=+25°C
50
f=175MHz
Vdd=12.5V 40
Idq=50mA
30
-5 0 5 10 15
Pin(dBm)
Pin-Po CHARACTERISTICS
1.2
120
Po
1.0
100
0.8
ηd
80
0.6
60
Ta=25°C
0.4
f=175MHz 40
Vdd=12.5V
0.2
Idq=50mA
Idd
20
0.0
0
0
5
10
15
20
Pin(mW)
Pin-Po CHARACTERISTICS
35
100
30
Po
90
Gp
25
80
20
70
15
60
ηｄ
10
Ta=+25°C
50
f=520MHz
5
Vdd=12.5V
40
Idq=50mA
0
30
-15 -10 -5 0 5 10 15
Pin(dBm)
Pin-Po CHARACTERISTICS
1.4
140
Po
1.2
120
1.0
100
Ta=25°C
0.8
f=520MHz
Vdd=12.5V
80
ηd
Idq=50mA
0.6
60
0.4
40
Idd
0.2
20
0.0
0
0
5
10
15
20
Pin(mW)
Vdd-Po CHARACTERISTICS
1.4
Ta=25°C
1.2 f=175MHz
Pin=5mW
1 Idq=50mA
Zg=ZI=50 ohm
0.8
0.6
280
Po 240
200
160
Idd
120
0.4
80
0.2
40
0
0
4 6 8 10 12 14
Vdd(V)
Vdd-Po CHARACTERISTICS
1.6
Ta=25°C
1.4 f=520MHz
Pin=15mW
1.2 Idq=50mA
Zg=ZI=50 ohm
1.0
320
Po
280
240
200
0.8
Idd 160
0.6
120
0.4
80
0.2
40
0.0
0
4 6 8 10 12 14
Vdd(V)
RD00HVS1
MITSUBISHI ELECTRIC
3/6
10 Jan 2006
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