2N5551ZL1 查看數據表（PDF） - ON Semiconductor

零件编号

产品描述 (功能)

比赛名单

2N5551ZL1

NPN Silicon Amplifier Transistors

ON Semiconductor 

2N5550, 2N5551

Preferred Device

Amplifier Transistors

NPN Silicon

Features

• Pb−Free Packages are Available*

• Device Marking: Device Type, e.g., 2N5550, Date Code

MAXIMUM RATINGS

Rating

Symbol 2N5550 2N5551 Unit

Collector − Emitter Voltage

Collector − Base Voltage

Emitter − Base Voltage

Collector Current − Continuous

Total Device Dissipation

@ TA = 25°C

Derate above 25°C

VCEO

VCBO

VEBO

IC

PD

140

160

160

180

6.0

600

Vdc

Vdc

Vdc

mAdc

625

mW

5.0

mW/°C

Total Device Dissipation

@ TC = 25°C

Derate above 25°C

Operating and Storage Junction

Temperature Range

PD

TJ, Tstg

1.5

12

−55 to +150

W

mW/°C

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance,

Junction−to−Ambient

RqJA

200

°C/W

Thermal Resistance,

Junction−to−Case

RqJC

83.3

°C/W

http://onsemi.com

COLLECTOR

3

2

BASE

1

EMITTER

MARKING

DIAGRAM

123

TO−92

CASE 29

STYLE 1

2N

55xx

YWW

55xx

Y

WW

Specific Device Code

= Year

= Work Week

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference

Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2004

1

June, 2004 − Rev. 3

Publication Order Number:

2N5550/D

Share Link: