2N5551ZL1 查看數據表（PDF） - ON Semiconductor

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2N5551ZL1

NPN Silicon Amplifier Transistors

ON Semiconductor 

2N5550, 2N5551

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

(IC = 1.0 mAdc, IB = 0)

2N5550

2N5551

Collector−Base Breakdown Voltage

(IC = 100 mAdc, IE = 0 )

2N5550

2N5551

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

(VCB = 120 Vdc, IE = 0)

(VCB = 100 Vdc, IE = 0, TA = 100°C)

(VCB = 120 Vdc, IE = 0, TA = 100°C)

Emitter Cutoff Current

(VEB = 4.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 1)

2N5550

2N5551

2N5550

2N5551

DC Current Gain

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

2N5550

2N5551

(IC = 10 mAdc, VCE = 5.0 Vdc)

2N5550

2N5551

(IC = 50 mAdc, VCE = 5.0 Vdc)

Collector−Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

Base−Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

SMALL−SIGNAL CHARACTERISTICS

Current−Gain — Bandwidth Product

(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Small−Signal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

Noise Figure

(IC = 250 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW,

f = 1.0 kHz)

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

2N5550

2N5551

Both Types

2N5550

2N5551

Both Types

2N5550

2N5551

2N5550

2N5551

2N5550

2N5551

Symbol

Min

Max

Unit

V(BR)CEO

140

160

V(BR)CBO

160

180

V(BR)EBO

6.0

ICBO

−

−

−

−

IEBO

−

Vdc

−

−

Vdc

−

−

−

Vdc

100

nAdc

50

100

mAdc

50

50

nAdc

hFE

60

80

60

80

20

30

VCE(sat)

−

−

−

VBE(sat)

−

−

−

fT

100

Cobo

−

Cibo

−

−

hfe

50

NF

−

−

−

−

−

250

250

−

−

Vdc

0.15

0.25

0.20

Vdc

1.0

1.2

1.0

300

MHz

6.0

pF

pF

30

20

200

−

dB

10

8.0

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