2SB1198 查看數據表（PDF） - Unisonic Technologies
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2SB1198 Datasheet PDF : 3 Pages
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UTC2SB1198 PNP EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS CURVES
-10
-5
-2
-1
-500m
-200m
-100m
-50m
-20m
-10m
-5m
-2m
-1m
0
1000
500
200
Figure 1.Grounded Emitter
PropagationCharacteristics
VCE = -3V
T a=100℃
T a=25℃
T a= -25℃
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
Base toEmitter Voltage:V BE(V)
Figure 3.DC Current Gain
vs.Collector Current
T a=100℃
VCE= -3V
T a=25℃
T a= -25℃
100
50
20
10
-1m
-10m
-100m
-1
Collector Current : Ic(A)
Fi gure5.Col l ec tor-emi tter S aturati on
Voltage vs.Collector Current (II)
-2
Ic/BI =10
-1
-500m
Figure 2.Grounded Emitter
OutputCharac teri s ti c s
-0.5
T a=25℃
-5.0mA
-45mA
-0.4
-40mA
-35mA
-30mA
-0.3 -25mA
-20mA
-1.5mA
-1.0mA
-0.2
-0.5mA
-0.1
0
IB =0mA
0
-0.4 -0.8 -1.2 -1.6 -2.0
Collector toEmitter Voltage:V CE(V)
Fi gure4.Col l ec tor-emi tter S aturati on
-2 Voltage vs.CollectorCurrent (I)
T a=25℃
-1
-500m
-200m
-100m
-50m
Ic /IB=50
20
10
-20m
-10m
-1
-10
-100
-1A
Collector Current : Ic(mA)
Fi gure6.Col l ec tor-emi tter S aturati on
Voltage vs.Collector Current (III)
-2
Ic/BI =20
-1
-500m
-200m
-100m
-50m
T a=100 ℃
T a=25℃
T a= -25℃
-200m
-100m
-50m
T a=100℃
T a=25 ℃
T a= -25 ℃
-20m
-10m
-1
-10
-100
-1A
Collector Current : Ic(mA)
-20m
-10m
-1
-10
-100
-1A
Collector Current : Ic(mA)
UTC UNISONIC TECHNOLOGIES CO. LTD 2
QW-R206-040,A
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