2SJ547 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SJ547

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

Main Characteristics

2SJ547

Power vs. Temperature Derating

40

30

20

10

0

50

100

150

200

Case Temperature Tc (°C)

–100

–50

Maximum Safe Operation Area

10 µs

–20

–10

–5

–2

–1

–0.5

PW

DC

= 10

Operation

Operation in

this area is

limited by R DS(on)

ms (1 shot)

(Tc=25℃)

–0.2

–0.1 Ta = 25 °C

–0.1 –0.3 –1 –3 –10 –30 –100

Drain to Source Voltage V DS (V)

Typical Output Characteristics

–10

–4 V Pulse Test

–10 V

–8

–6 V

–5 V

–3.5 V

–6

–4

–3 V

–2

VGS = –2.5 V

0

–2 –4 –6 –8 –10

Drain to Source Voltage V DS (V)

Typical Transfer Characteristics

–10

V DS = –10 V

Pulse Test

–8

–6

–4

Tc = 75 °C

25 °C

–2

–25 °C

0

–1 –2 –3 –4 –5

Gate to Source Voltage V GS (V)

3

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