2SJ547 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SJ547

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SJ547

Body–Drain Diode Reverse

Recovery Time

500

200

100

50

20

10

5

–0.1 –0.3

di / dt = 50 A / µs

VGS = 0, Ta = 25 °C

–1 –3 –10 –20

Reverse Drain Current I DR (A)

5000

1000

300

100

Typical Capacitance vs.

Drain to Source Voltage

VGS = 0

f = 1 MHz

Ciss

Coss

30

Crss

10

0 –10 –20 –30 –40 –50

Drain to Source Voltage V DS (V)

Dynamic Input Characteristics

0

0

V DD = –10 V

V DS

–25 V

–20

–50 V

–4

I D = –10 A

–40

–8

V GS

–60

–12

V DD = –10 V

–25 V

–80

–50 V –16

–100

0

8

16 24 32

Gate Charge Qg (nc)

–20

40

1000

300

100

30

10

Switching Characteristics

V GS = –10 V, V DD = –30 V

Pw = 5 µs, duty < 1 %

t d(off)

tf

tr

t d(on)

3

1

–0.1 –0.3

–1

–3 –10 –20

Drain Current I D (A)

5

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