2SK3084 查看數據表（PDF） - Toshiba
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2SK3084 Datasheet PDF : 3 Pages
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2SK3084
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS)
2SK3084
Chopper Regulator DC−DC Converter, and Motor Drive
Applications
Unit: mm
l 4 V gate drive
l Low drain−source ON resistance : RDS (ON) = 40 mΩ (typ.)
l High forward transfer admittance : |Yfs| = 27 S (typ.)
l Low leakage current
: IDSS = 100 µA (max) (VDS = 100 V)
l Enhancement−mode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
DCDrain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
100
V
100
V
±20
V
30
A
120
A
65
W
293
mJ
30
A
6.5
mJ
150
°C
−55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c)
Rth (ch−a)
1.92
°C / W
83.3
°C / W
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 525 µH, RG = 25 Ω, IAR = 30 A
Note 3: Repetitive rating; Pulse width limited by maximum channel
temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
1
2002-01-25
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