2SK3084 查看數據表（PDF） - Toshiba

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2SK3084

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS)

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Gate leakage current

Drain cut−off current

Drain−source breakdown voltage

Gate threshold voltage

Drain−source ON resistance

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Output capacitance

IGSS

IDSS

V (BR) DSS

Vth

RDS (ON)

|Yfs|

Ciss

Crss

Coss

VGS = ±16 V, VDS = 0 V

VDS = 100 V, VGS = 0 V

ID = 10 mA, VGS = 0 V

VDS = 10 V, ID = 1 mA

VGS = 4 V, ID = 15 A

VGS = 10 V, ID = 15 A

VDS = 10 V, ID = 15 A

VDS = 10 V, VGS = 0 V, f = 1 MHz

Rise time

tr

Turn−on time

ton

Switching time

Fall time

tf

Turn−off time

Total gate charge (Gate−source

plus gate−drain)

Gate−source charge

Gate−drain (“miller”) charge

toff

Qg

Qgs

VDD ≈ 80 V, VGS = 10 V, ID = 30 A

Qgd

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Continuous drain reverse current

(Note 1)

Pulse drain reverse current

(Note 1)

Forward voltage (diode)

Reverse recovery time

Reverse recovery charge

Symbol

IDR

IDRP

VDSF

trr

Qrr

Test Condition

—

—

IDR = 30 A, VGS = 0 V

IDR = 30 A, VGS = 0 V

dIDR / dt = 50 A / µs

Marking

2SK3084

Min Typ. Max Unit

—

—

±20

µA

—

—

100

µA

100

—

—

V

0.8

—

2.0

V

—

46

70

mΩ

—

40

46

13

27

—

S

— 3250 —

—

230

—

pF

—

520

—

—

33

—

—

60

—

ns

—

95

—

—

230

—

—

68

—

—

46

—

nC

—

22

—

Min Typ. Max Unit

—

—

30

A

—

—

120

A

—

— −1.7

V

—

140

—

ns

—

370

—

nC

2

2002-01-25

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