RMWL26001 查看數據表（PDF） - Raytheon Company
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RMWL26001 Datasheet PDF : 7 Pages
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RMWL26001
21-26.5 GHz Low Noise Amplifier MMIC
Figure 3
Recommended
Application Schematic
Circuit Diagram
Drain Supply
Vd=+4 V
10,000pF
100pF L
L
L
100pF
L
L
PRODUCT INFORMATION
L = Bond Wire Inductance
10,000pF
100pF
L 100pF
L
L
L
L
MMIC Chip
RF IN
RF OUT
L
L
100pF
L
100pF
100pF
L
L
Gate Supply
Vg
Ground
(Back of Chip)
Figure 4
Recommended
Assembly Diagram
Vdd
(Positive)
100pF
5mil Thick
Alumina
50-Ohm
RF
Input
10,000pF
100pF
100pF
10,000pF
Die-Attach
80Au/20Sn
100pF
5 mil Thick
Alumina
50-Ohm
RF
Output
www.raytheon.com/micro
100pF
100pF
2 mil Gap
Vg
(Negative)
L< 0.015”
(4 Places)
Note:
Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief.
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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