RMWL26001 查看數據表（PDF） - Raytheon Company
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RMWL26001 Datasheet PDF : 7 Pages
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RMWL26001
21-26.5 GHz Low Noise Amplifier MMIC
PRODUCT INFORMATION
Recommended
Procedure
for Biasing and
Operation
CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VD) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier:
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the grounds
of the chip carrier. Slowly apply negative gate
bias supply voltage of -1.5 V to Vg.
Step 3: Slowly apply positive drain bias supply voltage
of +4 V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq=65 mA.
Step 5: After the bias condition is established, RF input
signal may now be applied at the appropriate
frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd),
(iii) Turn down and off gate bias voltage (Vg).
Performance
Data
25
RMWL26001 26 GHz Low Noise Amplifier, Typical Performance
On-Wafer Measurements, IDQ = 65 mA, VDD = 4.0 V
0
S21
20
-5
15
-10
S11
10
-15
S22
5
-20
0
-25
21
21.5
22
22.5
23
23.5
24
24.5
25
25.5
26
26.5
Frequency (GHz)
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 4
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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