GS88218BD-133I 查看數據表（PDF） - Giga Semiconductor

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GS88218BD-133I

512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs

Giga Semiconductor 

GS88218/36BB/D-250/225/200/166/150/133

Absolute Maximum Ratings

(All voltages reference to VSS)

Symbol

Description

Value

Unit

VDD

Voltage on VDD Pins

–0.5 to 4.6

V

VDDQ

VI/O

VIN

Voltage in VDDQ Pins

Voltage on I/O Pins

Voltage on Other Input Pins

–0.5 to 4.6

V

–0.5 to VDDQ +0.5 (≤ 4.6 V max.)

V

–0.5 to VDD +0.5 (≤ 4.6 V max.)

V

IIN

Input Current on Any Pin

+/–20

mA

IOUT

Output Current on Any I/O Pin

PD

Package Power Dissipation

+/–20

mA

1.5

W

TSTG

Storage Temperature

–55 to 125

oC

TBIAS

Temperature Under Bias

–55 to 125

oC

Note:

Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended

Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of

this component.

Rev: 1.00b 12/2002

14/33

© 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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