GS88218BD-133I 查看數據表（PDF） - Giga Semiconductor
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GS88218BD-133I Datasheet PDF : 33 Pages
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AC Test Conditions
Parameter
Conditions
Input high level
VDD – 0.2 V
Input low level
0.2 V
Input slew rate
1 V/ns
Input reference level
VDD/2
Output reference level
VDDQ/2
Output load
Fig. 1
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
3. Device is deselected as defined by the Truth Table.
GS88218/36BB/D-250/225/200/166/150/133
DC Electrical Characteristics
Parameter
Input Leakage Current
(except mode pins)
ZZ and PE Input Current
FT, SCD, ZQ Input Current
Output Leakage Current
Output High Voltage
Output High Voltage
Output Low Voltage
Output Load 1
DQ
50Ω
30pF*
VDDQ/2
* Distributed Test Jig Capacitance
Symbol
IIL
IIN1
IIN2
IOL
VOH2
VOH3
VOL
Test Conditions
VIN = 0 to VDD
VDD ≥ VIN ≥ VIH
0 V ≤ VIN ≤ VIH
VDD ≥ VIN ≥ VIL
0 V ≤ VIN ≤ VIL
Output Disable, VOUT = 0 to VDD
IOH = –8 mA, VDDQ = 2.375 V
IOH = –8 mA, VDDQ = 3.135 V
IOL = 8 mA
Min
–1 uA
–1 uA
–1 uA
–100 uA
–1 uA
–1 uA
1.7 V
2.4 V
—
Max
1 uA
1 uA
100 uA
1 uA
1 uA
1 uA
—
—
0.4 V
Rev: 1.00b 12/2002
17/33
© 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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