P4C198L 查看數據表（PDF） - Performance Semiconductor
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P4C198L Datasheet PDF : 13 Pages
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P4C198/198L, P4C198A/198AL
AC CHARACTERISTICS—READ CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Sym. Parameter
-10
-12
-15
-20
-25
-35
-45
Min Max Min Max Min Max Min Max Min Max Min Max Min Max Unit
tRC Read Cycle Time 10
12
15
20
25
35
45
ns
tAA Address Access
10
12
15
20
25
35
45 ns
Time
tAC Chip Enable
Access Time
10
12
15
20
25
35
45 ns
tOH Output Hold from 2
2
2
2
2
2
2
ns
Address Change
tLZ Chip Enable to
2
2
2
2
2
2
2
ns
Output in Low Z
tHZ Chip Disable to
6
7
8
10
10
14
15 ns
Output in High Z
tOE Output Enable
6
7
9
12
15
25
30 ns
Low to Data Valid
tOLZ Output Enable to 2
2
2
2
2
2
2
ns
Output in Low Z
tOHZ Output Disable to
6
7
9
9
10
14
15 ns
Output in High Z
tPU Chip Enable to
0
0
0
0
0
0
0
ns
Power Up Time
tPD Chip Disable to
10
12
15
20
25
35
45 ns
Power Down Time
READ CYCLE NO.1 (OE controlled)(5)
Notes:
5. WE is HIGH for READ cycle.
Document # SRAM113 REV A
Page 4 of 13
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