P4C198 查看數據表（PDF） - Performance Semiconductor

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P4C198

ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS

Performance Semiconductor 

READ CYCLE NO. 2 (ADDRESS Controlled)(5,6)

P4C198/198L, P4C198A/198AL

READ CYCLE NO. 3 (CE(12) Controlled)(5,7,8)

Notes:

6. CE (CE1 CE2 for P4C198A/L) and OE are LOW READ cycle.

7. OE is LOW for the cycle.

8. ADDRESS must be valid prior to, or coincident with CE (CE1

and CE2 for P4C198A/L) transition LOW.

9. Transition is measured ± 200mV from steady state voltage

prior to change, with loading as specified in Figure 1.

10. Read Cycle Time is measured from the last valid address

to the first transitioning address.

11. Transitions caused by a chip enable control have similar

delays irrespective of whether CE1 or CE2 causes them

(P4C198A/L).

12. CE1, CE2 for P4C198A/L.

Document # SRAM113 REV A

Page 5 of 13

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