P4C198 查看數據表（PDF） - Performance Semiconductor

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P4C198

ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS

Performance Semiconductor 

WRITE CYCLE NO. 2 (WE CONTROLLED)(13,14)

P4C198/198L, P4C198A/198AL

1520 08

WRITE CYCLE NO. 3 (CE(12) CONTROLLED)(13,14)

Notes:

13. CE (CE1, CE2 for P4C198A/L) and WE must be LOW for WRITE

cycle.

14. OE is LOW for this WRITE cycle.

15. If CE (CE1 or CE2 for P4C198A/L) goes HIGH simultaneously with WE

HIGH, the output remains in a high impedance state.

16. Write Cycle Time is measured from the last valid address to the first

transitioning address.

Document # SRAM113 REV A

Page 7 of 13

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