AO3419 查看數據表（PDF） - Unspecified

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AO3419

20V P-Channel MOSFET

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AO3419

20V P-Channel MOSFET

General Description

The AO3419 uses advanced trench technology to provide excellent R , DS(ON) low gate charge and operation with gate

voltages as low as 2.5V. This device is suitable for use as a load switch applications.

Features

VDS

ID (at VGS=-10V)

RDS(ON) (at VGS= -10V)

RDS(ON) (at VGS= -4.5V)

RDS(ON) (at VGS= -2.5V)

-20V

-3.5A

< 85mΩ

< 102mΩ

< 140mΩ

Typical ESD protection

HBM Class 2

D

G

S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain

Current

TA=25°C

TA=70°C

ID

Pulsed Drain Current C

IDM

TA=25°C

Power Dissipation B TA=70°C

PD

Junction and Storage Temperature Range

TJ, TSTG

Maximum

-20

±12

-3.5

-2.8

-17

1.4

0.9

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Maximum Junction-to-Ambient A t ≤ 10s

Maximum Junction-to-Ambient A D Steady-State

RθJA

65

85

Maximum Junction-to-Lead

Steady-State

RθJL

43

Max

90

125

60

Units

V

V

A

W

°C

Units

°C/W

°C/W

°C/W

1/5

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