AO3419 查看數據表（PDF） - Unspecified
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AO3419 Datasheet PDF : 5 Pages
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AO3419
20V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
VDS=-10V
4
ID=-3.5A
3
2
600
450
Ciss
300
150
Coss
1
0
0
1
2
3
4
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
10.0
RDS(ON)
limited
10µs
100µs
1.0
1ms
10ms
DC
0.1
TJ(Max)=150°C
TA=25°C
0.0
100ms
10s
0.01
0.1
1
10
100
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
Crss
0
5
10
15
20
-VDS (Volts)
Figure 8: Capacitance Characteristics
1000
100
TJ(Max)=150°C
TA=25°C
10
1
0.00001 0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Single Pulse
0.01
Ton
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
1000
4/5
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