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APW7067N 查看數據表(PDF) - Anpec Electronics

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APW7067N Datasheet PDF : 24 Pages
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APW7067N
Layout Consideration
In any high switching frequency converter, a correct
layout is important to ensure proper operation of the
regulator. With power devices switching at 300KHz or
above, the resulting current transient will cause voltage
spike across the interconnecting impedance and parasitic
circuit elements. As an example, consider the turn-off
transition of the PWM MOSFET. Before turn-off, the
MOSFET is carrying the full load current. During turn-off,
current stops flowing in the MOSFET and is free-wheeling
by the lower MOSFET and parasitic diode. Any parasitic
inductance of the circuit generates a large voltage spike
during the switching interval. In general, using short, wide
printed circuit traces should minimize interconnecting
impedances and the magnitude of voltage spike. And
signal and power grounds are to be kept separate
till combined using ground plane construction or single
point grounding. Figure 11. illustrates the layout, with bold
lines indicating high current paths; these traces must be
short and wide. Components along the bold lines should
be placed lose together. Below is a checklist for your
layout:
- The metal plate of the bottom of the packages
(QFN-16) must be soldered to the PCB and connected
to the GND plane on the backside through several
thermal vias.
- Keep the switching nodes (UGATE, LGATE and
PHASE) away from sensitive small signal nodes
since these nodes are fast moving signals. Therefore,
keep traces to these nodes as short as possible.
- The traces from the gate drivers to the MOSFETs
(UG, LG, DRIVE) should be short and wide.
- Place the source of the high-side MOSFET and the
drain of the low-side MOSFET as close as possible.
Minimizing the impedance with wide layout plane
between the two pads reduces the voltage bounce of
the node.
- Decoupling capacitor, compensation component,
the resistor dividers and boot capacitors should
be close their pins. (For example, place the
decoupling ceramic capacitor near the drain of
the high-side MOSFET as close as possible. The
bulk capacitors are also placed near the drain).
- The input capacitor should be near the drain of the
upper MOSFET; the output capacitor should be near
the loads. The input capacitor GND should be close
to the output capacitor GND and the lower MOSFET
GND.
- The drain of the MOSFETs (VIN1 and PHASE nodes)
should be a large plane for heat sinking.
VIN2
VOUT2
L
O
A
D
APW7067N
DRIVE
FBL
VCC12
BOOT
UGATE
PHASE
LGATE
VIN1
L
O
A
D
VOUT1
Figure 11. Layout Guidelines
Copyright © ANPEC Electronics Corp.
18
Rev. A.3 - Mar., 2008
www.anpec.com.tw

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