AS5030 查看數據表（PDF） - austriamicrosystems AG
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AS5030 Datasheet PDF : 44 Pages
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AS5030
Datasheet - Electrical Characteristics
6.3 Magnet Specifications
Recommended magnet: NdFeB 35H BR = 12.000 Gauss, Ø6mm x 2.5mm
Symbol
MD
MT
Bi
vi
Bmax
Bmin
Parameter
Magnet diameter
Magnet thickness
Magnetic input range
Magnet rotation speed
Magnetic field high detection
Magnetic field low detection
Hall array radius
Conditions
Diametrically magnetized
At chip surface, on a radius of 1mm
To maintain locked state
TAMB=25°C, AGC @ lower limit,
1 sigma = 2.5mT
TAMB=25°C, AGC @ upper limit,
1 sigma = 1.5mT
Over x/y chip center
Min Typ Max Units
6
mm
2.5
mm
20
80
mT
30.000 rpm
52
mT
23
1
mm
Recommended distance; operation outside
Vertical distance of magnet
this range is possible, accuracy may be
0.5
1
1.8
mm
reduced
Horizontal magnet displacement radius
From diagonal package center
From diagonal IC center
0.25
mm
0.5
tkM
Recommended magnet material and
temperature drift
NdFeB Material
SmCo Material
-0.12
%/K
-0.035
6.4 Magnetic Field Alarm Limits
Symbol
Parameter
Conditions
Min Typ Max Units
AGCFF
Magnetic field too low alarm limit
AGC = FFH
untrimmed, 25°C, 1sigma
20.3
23.6
mT
AGC0
Magnetic field too high alarm limit
AGC = 0H
untrimmed, 25°C, 1sigma
44.5
52.2
mT
Magnetic field alarm limit trim range
(see Hall Element Sensitivity Options on
page 7)
100
121
%
Sensitivity increases with temperature which
Temperature coefficient of alarm ranges partly compensates the temperature
0.052
%/K
coefficient of the magnet
6.5 Hall Element Sensitivity Options
Symbol
sens
Parameter
Conditions
Min Typ Max Units
sens = 00 (default); low sensitivity
(see 18-bit OTP Write Commands on page
100
25)
Hall element sensitivity setting
sens = 01
106
%
sens = 10
113
sens = 11 (high sensitivity)
121
www.ams.com/AS5030
Revision 2.4
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