AS6C6264 查看數據表（PDF） - Alliance Semiconductor
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AS6C6264 Datasheet PDF : 12 Pages
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®
8K X 8 BIT LOW POWER CMOS SRAM
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
SYM.
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
tRC
tAA
tACE
tOE
tCLZ*
tOLZ*
tCHZ*
tOHZ*
tOH
AS6C6264-55
MIN. MAX.
55
-
-
55
-
55
30
10
-
5
-
-
20
20
10
-
(2) WRITE CYCLE
PARAMETER
SYM.
AS6C6264-55
MIN. MAX.
Write Cycle Time
tWC
Address Valid to End of Write
tAW
Chip Enable to End of Write
tCW
Address Set-up Time
tAS
55
-
50
-
50
-
0
-
Write Pulse Width
tWP
45
-
Write Recovery Time
tWR
0
-
Data to Write Time Overlap
tDW
25
-
Data Hold from End of Write Time tDH
0
-
Output Active from End of Write
tOW*
5
-
Write to Output in High-Z
tWHZ*
-
20
*These parameters are guaranteed by device characterization, but not production tested.
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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