ATF-33143 查看數據表（PDF） - HP => Agilent Technologies

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ATF-33143

Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package

HP => Agilent Technologies 

ATF-33143 DC Electrical Specifications

TA = 25°C, RF parameters measured in a test circuit for a typical device

Symbol

Parameters and Test Conditions

Units Min. Typ.[2] Max.

Idss [1]

VP [1]

Saturated Drain Current

Pinchoff Voltage

VDS = 1.5 V, VGS = 0 V mA 175 237 305

VDS = 1.5 V, IDS = 10% of Idss V -0.65 -0.5 -0.35

Id

gm[1]

IGDO

Igss

Quiescent Bias Current

Transconductance

Gate to Drain Leakage Current

Gate Leakage Current

VGS = -0.5 V, VDS = 4 V mA — 80 —

VDS = 1.5 V, gm = Idss /VP mmho 360 440 —

VGD = 5 V µA

1000

VGD = VGS = -4 V µA — 42 600

NF

Noise Figure

f = 2 GHz VDS = 4 V, IDS = 80 mA dB

VDS = 4 V, IDS = 60 mA

f = 900 MHz VDS = 4 V, IDS = 80 mA dB

VDS = 4 V, IDS = 60 mA

0.5 0.8

0.5

0.4

0.4

Ga

Associated Gain[3]

f = 2 GHz VDS = 4 V, IDS = 80 mA dB 13.5 15 16.5

VDS = 4 V, IDS = 60 mA

15

f = 900 MHz VDS = 4 V, IDS = 80 mA dB

21

VDS = 4 V, IDS = 60 mA

21

OIP3

P1dB

Output 3rd Order

f = 2 GHz VDS = 4 V, IDS = 80 mA dBm 30 33.5

5 dBm Pout/Tone VDS = 4 V, IDS = 60 mA

32

Intercept Point[3]

f = 900 MHz VDS = 4 V, IDS = 80 mA dBm

32.5

5 dBm Pout/Tone VDS = 4 V, IDS = 60 mA

31

1 dB Compressed

f = 2 GHz VDS = 4 V, IDS = 80 mA dBm

22

VDS = 4 V, IDS = 60 mA

21

Compressed Power[3]

f = 900 MHz VDS = 4 V, IDS = 80 mA dBm

21

VDS = 4 V, IDS = 60 mA

20

Notes:

1. Guaranteed at wafer probe level.

2. Typical value determined from a sample size of 450 parts from 9 wafers.

3. Measurements obtained using production test board described in Figure 5.

Input

50 Ohm

Transmission

Line Including

Gate Bias T

(0.5 dB loss)

Input

Matching Circuit

Γ_mag = 0.20

Γ_ang = 124°

(0.3 dB loss)

DUT

50 Ohm

Transmission

Line Including

Drain Bias T

(0.5 dB loss)

Output

Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measure-

ments. This circuit represents a trade-off between an optimal noise match and a realizable match based on production test

requirements. Circuit losses have been de-embedded from actual measurements.

3

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