ATF-33143 查看數據表（PDF） - HP => Agilent Technologies
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ATF-33143 Datasheet PDF : 14 Pages
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ATF-33143 Typical Performance Curves, continued
1.5
80 mA
60 mA
30
80 mA
25
60 mA
1.0
20
15
0.5
10
5
0
0
2
4
6
8
10
FREQUENCY (GHz)
Figure 12. Fmin vs. Frequency and
Current at 4V.
0
0
2
4
6
8
10
FREQUENCY (GHz)
Figure 13. Associated Gain vs.
Frequency and Current at 4V.
25
25°C
-40°C
85°C
20
15
10
2.0
40
35
1.5
30
1.0
25
0.5
20
25°C
-40°C
85°C
5
0
0
2
4
6
8
10
FREQUENCY (GHz)
Figure 14. Fmin and Ga vs. Frequency
and Temp at VDS = 4 V, I DS = 80mA.
35
3.5
30
P1dB 3.0
OIP3
25
Gain 2.5
NF
20
2.0
15
1.5
10
1.0
5
0.5
0
0
0 20 40 60 80 100 120
IDSQ (mA)
Figure 16. OIP3, P1dB, NF and Gain vs.
Bias[1,2] at 3.9 GHz.
15
0
2000 4000 6000 8000
FREQUENCY (MHz)
Figure 15. P1dB, OIP3 vs. Frequency
and Temp at VDS = 4 V, I DS = 80mA.
35
30
3
25
20
2
15
10
1
5
P1dB
Gain
OIP3
NF
0
0
0 20 40 60 80 100 120
IDSQ (mA)
Figure 17. OIP3, P1dB, NF and Gain vs.
Bias [1,2] at 5.8 GHz.
Notes:
1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 4V 80 mA bias. This circuit represents a trade-off
between optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have
been de-embedded from actual measurements.
2. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease
depending on frequency and dc bias point. At lower values of Idsq the device is running closer to class B as power output approaches
P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant
current source as is typically done with active biasing.
5
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