BS616LV1622TIG70 查看數據表（PDF） - Brilliance Semiconductor
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BS616LV1622TIG70 Datasheet PDF : 10 Pages
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BSI
BS616LV1622
DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )
PARAMETER
NAME
VIL
VIH
IIL
PARAMETER
Guaranteed Input Low
Voltage(3)
Guaranteed Input High
Voltage(3)
Input Leakage Current
TEST CONDITIONS
Vcc = Max, VIN = 0V to Vcc
Vcc=3V
Vcc=5V
Vcc=3V
Vcc=5V
MIN. TYP. (1) MAX.
-0.5
--
0.8
-0.5
--
0.8
2.0
--
Vcc+0.3
2.2
--
Vcc+0.3
--
--
1
UNITS
V
V
uA
ILO
Output Leakage Current
Vcc = Max, CE1 = VIH, or CE2 =V iL, or
OE = VIH, VI/O = 0V to Vcc
--
--
1
uA
VOL
Output Low Voltage
Vcc = Max, IOL= 2mA
Vcc=3V
--
--
0.4
Vcc=5V
--
--
0.4
V
VOH
Output High Voltage
Vcc = Min, IOH= -1mA
Vcc=3V 2.4
--
--
Vcc=5V 2.4
--
--
V
(4)
ICC
Operating Power Supply CE1 = VIL and CE2 = VIH 70ns Vcc=3V
--
Current
, IDQ = 0mA, F = Fmax(2) 70ns Vcc=5V
--
--
--
37
92
mA
ICCSB
Standby Current-TTL
CE1 = VIH or CE2 = VIL
, IDQ = 0mA
Vcc=3V
--
--
1.3
mA
Vcc=5V
--
--
2.5
(5)
CE1≧Vcc-0.2V, or CE2≦0.2V, or Vcc=3V
--
3
20
ICCSB1
Standby Current-CMOS LB and UB ≧ Vcc - 0.2V
uA
V IN ≧ Vcc - 0.2V or VIN ≦ 0.2V
Vcc=5V
--
15
220
1. Typical characteristics are at TA = 25oC.
2. Fmax = 1/tRC .
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4. Icc_Max. is 46mA(@3.0V) / 115mA(@5.0V) under 55ns operation.
5.IccsB1 is 10uA/110uA at Vcc=3.0V/5.0V and TA=70oC.
R0201-BS616LV1622
4
Revision 2.1
Jan. 2004
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