BS616LV1622TIG70 查看數據表（PDF） - Brilliance Semiconductor

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BS616LV1622TIG70

Very Low Power/Voltage CMOS SRAM 64K X 16 bit

Brilliance Semiconductor 

BSI

„ DATA RETENTION CHARACTERISTICS ( TA = -40oC to +85oC )

SYMBOL

PARAMETER

VDR

Vcc for Data Retention

(3)

ICCDR

Data Retention Current

tCDR

Chip Deselect to Data

Retention Time

tR

Operation Recovery Time

TEST CONDITIONS

CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V or

LB ≧ Vcc - 0.2V and UB ≧ Vcc - 0.2V

VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V

CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V or

LB ≧ Vcc - 0.2V and UB ≧ Vcc - 0.2V

VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V

See Retention Waveform

BS616LV1622

MIN. TYP. (1) MAX.

1.5

--

--

UNITS

V

--

1.5

5

uA

0

--

--

ns

TRC (2)

--

--

ns

1. Vcc = 1.5V, TA = + 25OC

2. tRC = Read Cycle Time

3. IccDR(Max.) is 2.5uA at TA=70OC.

„ LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )

Vcc

CE1

Vcc

t CDR

VIH

Data Retention Mode

VDR ≧ 1.5V

CE1 ≧ Vcc - 0.2V

Vcc

tR

VIH

„ LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )

Vcc

CE2

Vcc

t CDR

VIL

Data Retention Mode

VDR ≧ 1.5V

CE2 ≦ 0.2V

Vcc

tR

VIL

R0201-BS616LV1622

5

Revision 2.1

Jan. 2004

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