BSS209PW 查看數據表（PDF） - Infineon Technologies

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BSS209PW

OptiMOS®-P Small-Signal-Transistor

Infineon Technologies 

Parameter

Thermal characteristics

Thermal resistance,

junction - soldering point

SMD version, device on PCB:

Symbol Conditions

BSS 209PW

min.

Values

typ.

Unit

max.

R thJS

-

R thJA

minimal footprint

-

6 cm2 cooling area1)

-

-

120 K/W

-

420

-

350

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=-250µA

-20

-

-V

Gate threshold voltage

V GS(th) V DS=V GS, I D=3.5 µA

-0.6

-0.9

-1.2

Zero gate voltage drain current

Gate-source leakage current

I DSS

V DS=-20 V, V GS=0 V,

T j=25 °C

-

V DS=-20 V, V GS=0 V,

T j=150 °C

-

I GSS

V GS=12 V, V DS=0 V

-

Drain-source on-state resistance

R DS(on) V GS=2.5 V, I D=0.46 A

-

-0.1

-1 µA

-10

-100

-10

-100 nA

581

900

V GS=4.5 V, I D=0.63 A

-

379

550

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=0.46 A

0.87

1.74

-S

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air; t≤10 sec.

Rev. 1.32

page 2

2011-07-13

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